Takashi Ohzone : rechercher sur Z-Library

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1

Multiband simulation of quantum transport in nanoscale double-gate MOSFETs

Hideyuki Iwata, Toshihiro Matsuda, Takashi Ohzone

Journal:

Solid-State Electronics

Année:

2009

Langue:

english

Fichier:

PDF, 441 KB

english, 2009

2

Numerical analysis of temperature dependence of very-short-pulse-induced dynamic latchup in CMOS

Hideyuki Iwata, Takashi Ohzone

Journal:

Solid-State Electronics

Année:

1997

Langue:

english

Fichier:

PDF, 606 KB

english, 1997

3

Computationally efficient method for scattering device simulation in nanoscale MOSFETs

Hideyuki Iwata, Toshihiro Matsuda, Takashi Ohzone

Journal:

Solid-State Electronics

Année:

2007

Langue:

english

Fichier:

PDF, 552 KB

english, 2007

4

Transport Equations for Homogeneous and Variable-Composition Semiconductor Devices at Low Temperatures

Iwata, Hideyuki, Ohzone, Takashi

Journal:

Japanese Journal of Applied Physics

Année:

1996

Fichier:

PDF, 288 KB

1996

5

Analysis of Temperature Distribution in Stacked IC With On-Chip Sensing Device Arrays

Matsuda, Toshihiro, Yamada, Keita, Demachi, Haruka, Iwata, Hideyuki, Hatakeyama, Tomoyuki, Ishizuka, Masaru, Ohzone, Takashi

Journal:

IEEE Transactions on Semiconductor Manufacturing

Année:

2015

Langue:

english

Fichier:

PDF, 2.37 MB

english, 2015

6

Analysis of Metal Wire Effect on Temperature Distribution in Stacked IC with Thinned Chip

Matsuda, Toshihiro, Demachi, Haruka, Iwata, Hideyuki, Hatakeyama, Tomoyuki, Ohzone, Takashi

Journal:

IEEE Transactions on Semiconductor Manufacturing

Année:

2017

Langue:

english

Fichier:

PDF, 2.37 MB

english, 2017

7

Photon-energy distribution of hot-carrier photoemission from LOCOS and trench-isolated MOSFETs

Takashi Ohzone, Hideyuki Iwata, Yukiharu Uraoka, Shinji Odanaka

Journal:

Solid-State Electronics

Année:

1994

Langue:

english

Fichier:

PDF, 771 KB

english, 1994

8

A MOSFET with Si-implanted gate-SiO2 structure for analog-storage EEPROm applications

Takashi Ohzone, Takashi Hori

Journal:

Solid-State Electronics

Année:

1994

Langue:

english

Fichier:

PDF, 321 KB

english, 1994

9

Time dependent dielectric breakdown characteristics of MOS capacitors with Si-implanted SiO2

Toshihiro Matsuda, Takashi Ohzone, Takashi Hori

Journal:

Solid-State Electronics

Année:

1996

Langue:

english

Fichier:

PDF, 495 KB

english, 1996

10

Blue electroluminescence from MOS capacitors with Si-implanted SiO2

Toshihiro Matsuda, Kiyoshi Nishihara, Masaharu Kawabe, Hideyuki Iwata, Satoshi Iwatsubo, Takashi Ohzone

Journal:

Solid-State Electronics

Année:

2004

Langue:

english

Fichier:

PDF, 451 KB

english, 2004

11

Direct-current and alternating-current electroluminescence of MOS capacitors with Si-implanted SiO2

Toshihiro Matsuda, Yasuhiro Honda, Takashi Ohzone

Journal:

Solid-State Electronics

Année:

1998

Langue:

english

Fichier:

PDF, 546 KB

english, 1998

12

Fowler–Nordheim tunneling in MOS capacitors with Si-implanted SiO2

Etsumasa Kameda, Toshihiro Matsuda, Yoshiko Emura, Takashi Ohzone

Journal:

Solid-State Electronics

Année:

1998

Langue:

english

Fichier:

PDF, 494 KB

english, 1998

13

Study of the current–voltage characteristics in MOS capacitors with Si-implanted gate oxide

Etsumasa Kameda, Toshihiro Matsuda, Yoshiko Emura, Takashi Ohzone

Journal:

Solid-State Electronics

Année:

1999

Langue:

english

Fichier:

PDF, 393 KB

english, 1999

14

Interface state density in n-MOSFETs with Si-implanted gate oxide measured by subthreshold slope analysis

Etsumasa Kameda, Toshihiro Matsuda, Masahiro Yasuda, Takashi Ohzone

Journal:

Solid-State Electronics

Année:

1999

Langue:

english

Fichier:

PDF, 352 KB

english, 1999

15

A time-dependent and two-dimensional device analysis of CMOS structures

Shinji Odanaka, Mutsuko Wakabayashi, Takashi Ohzone, Toyoki Takemoto

Journal:

Electronics and Communications in Japan (Part II: Electronics))

Année:

1985

Langue:

english

Fichier:

PDF, 539 KB

english, 1985

16

Improvement of asymmetrical characteristics in submicron CMOS devices

Toshiki Yabu, Kazumi Kurimoto, Hiroyuki Yamauchi, Masanori Fukumoto, Takashi Ohzone

Journal:

Electronics and Communications in Japan (Part II: Electronics))

Année:

1990

Langue:

english

Fichier:

PDF, 568 KB

english, 1990

17

[IEEE 2014 International Conference on Microelectronic Test Structures (ICMTS) - Udine, Italy (2014.3.24-2014.3.27)] 2014 International Conference on Microelectronic Test Structures (ICMTS) - A test structure for analysis of temperature distribution in stacked IC with sensing device array

Matsuda, Toshihiro, Yamada, Keita, Iwata, Hideyuki, Hatakeyama, Tomoyuki, Ishizuka, Masaru, Ohzone, Takashi

Année:

2014

Langue:

english

Fichier:

PDF, 1.45 MB

english, 2014

18

Fluorine distributions in a chemical vapor deposited tungsten silicide/polycrystalline silicon composite gate structure

Fukumoto, Masanori, Ohzone, Takashi

Journal:

Applied Physics Letters

Année:

1987

Langue:

english

Fichier:

PDF, 550 KB

english, 1987

19

Current Career Literature

Matsuda, Toshihiro, Hanai, Hiroki, Tohjo, Takeshi, Iwata, Hideyuki, Kondo, Daiji, Hatakeyama, Tomoyuki, Ishizuka, Masaru, Ohzone, Takashi

Journal:

The Career Development Quarterly

Année:

1987

Langue:

english

Fichier:

PDF, 260 KB

english, 1987

20

Temperature Distribution Analysis of CMOS LSI With On-Chip Sensing Device Arrays

Matsuda, Toshihiro, Hanai, Hiroki, Tohjo, Takeshi, Iwata, Hideyuki, Kondo, Daiji, Hatakeyama, Tomoyuki, Ishizuka, Masaru, Ohzone, Takashi

Journal:

IEEE Transactions on Semiconductor Manufacturing

Année:

2014

Langue:

english

Fichier:

PDF, 15.53 MB

english, 2014

21

Two-Dimensional Self-Consistent Calculation of Gate Direct Tunneling Current in Metal–Oxide–Semiconductor Transistors

Iwata, Hideyuki, Matsuda, Toshihiro, Ohzone, Takashi

Journal:

Japanese Journal of Applied Physics

Année:

2003

Langue:

english

Fichier:

PDF, 195 KB

english, 2003

22

Ultraviolet and white electroluminescence from metal–oxide–semiconductor devices fabricated by spin-coating of gadolinium organic compounds on silicon

Ohzone, Takashi, Matsuda, Toshihiro, Saito, Shogo, Iwata, Hideyuki

Journal:

Japanese Journal of Applied Physics

Année:

2014

Langue:

english

Fichier:

PDF, 578 KB

english, 2014

23

Impact of Surface Band Bending at the Rear Si–SiO 2 Interface on Conversion Efficiency of Rear Locally-Contacted Silicon Solar Cells

Iwata, Hideyuki, Ohzone, Takashi

Journal:

Japanese Journal of Applied Physics

Année:

1998

Fichier:

PDF, 817 KB

1998

24

The Influence of Magnetic Plugging on RF Plasma Density

Nishimura, Kimihiro, Yoshino, Yasushi, Sawara, Atsuo, Ohta, Tadayuki, Sunagawa, Michio, Ohzone, Takashi

Journal:

Japanese Journal of Applied Physics

Année:

1996

Langue:

english

Fichier:

PDF, 451 KB

english, 1996

25

Green Electroluminescence from Metal–Oxide–Semiconductor Devices Fabricated by Spin Coating of Terbium Organic Compounds on Silicon

Ohzone, Takashi, Matsuda, Toshihiro, Hase, Souta, Nohara, Shingo, Iwata, Hideyuki

Journal:

Japanese Journal of Applied Physics

Année:

2010

Langue:

english

Fichier:

PDF, 265 KB

english, 2010

26

Numerical Simulation of Silicon-on-Insulator Thin-Film Solar Cells

Iwata, Hideyuki, Ohzone, Takashi, Takakura, Hideyuki

Journal:

Japanese Journal of Applied Physics

Année:

1995

Langue:

english

Fichier:

PDF, 525 KB

english, 1995

27

Impact of Image and Exchange-Correlation Effects on Ballistic Electron Transport in Nanoscale Double-Gate Metal-Oxide-Semiconductor Transistors

Iwata, Hideyuki, Matsuda, Toshihiro, Ohzone, Takashi

Journal:

Japanese Journal of Applied Physics

Année:

2004

Langue:

english

Fichier:

PDF, 184 KB

english, 2004

28

An Accurate and Computationally Efficient Method for Device Simulation with Scattering in Nanoscale Double-Gate Metal–Oxide–Semiconductor Transistors

Iwata, Hideyuki, Matsuda, Toshihiro, Ohzone, Takashi

Journal:

Japanese Journal of Applied Physics

Année:

2006

Langue:

english

Fichier:

PDF, 212 KB

english, 2006

29

[IEEE 2016 International Conference on Microelectronic Test Structures (ICMTS) - Yokohama, Japan (2016.3.28-2016.3.31)] 2016 International Conference on Microelectronic Test Structures (ICMTS) - A test structure for analysis of metal wire effect on temperature distribution in stacked IC

Matsuda, Toshihiro, Demachi, Haruka, Iwata, Hideyuki, Hatakeyama, Tomoyuki, Ohzone, Takashi

Année:

2016

Langue:

english

Fichier:

PDF, 12.84 MB

english, 2016

30

Blue/pink/purple electroluminescence from metal–oxide–semiconductor devices fabricated by spin-coating of [tantalum:(gadolinium/praseodymium)] and (praseodymium:cerium) organic compounds on silicon

Ohzone, Takashi, Matsuda, Toshihiro, Fukuoka, Ryouhei, Hattori, Fumihiro, Iwata, Hideyuki

Journal:

Japanese Journal of Applied Physics

Année:

2016

Langue:

english

Fichier:

PDF, 2.34 MB

english, 2016

31

[IEEE 2017 IEEE Electron Devices Technology and Manufacturing Conference (EDTM) - Toyama, Japan (2017.2.28-2017.3.2)] 2017 IEEE Electron Devices Technology and Manufacturing Conference (EDTM) - Electroluminescence characteristics of rare earth doped silicon based light emitting device

Hattori, Fumihiro, Iwata, Hideyuki, Matsuda, Toshihiro, Ohzone, Takashi

Année:

2017

Langue:

english

Fichier:

PDF, 470 KB

english, 2017